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| jmnic product specification silicon pnp power transistors 2sa1106 description ? with to-3pn package ? high frequency ? high power dissipation applications ? audio power amplifer applications ? dc-dc converters pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol param eter conditions va lue unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -140 v v ebo emitter-base voltage open collector -6 v i c collector current -10 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
jmnic product specification 2 silicon pnp power transistors 2sa1106 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -140 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -1.5 v v besat base-emitter saturation voltage i c =-5a; i b =-0.5a -1.8 v i cbo collector cut-off current v cb =-140v; i e =0 -100 | a i ebo emitter cut-off current v eb =-6v; i c =0 -100 | a h fe dc current gain i c =-5a ; v ce =4v 50 180 f t transition fre quenc y i e =1a ; v ce =-12v 20 mhz jmnic product specification 3 silicon pnp power transistors 2sa1106 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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